Array of alpha particle sensors

ABSTRACT

An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).

Applicant claims the benefit of Provisional Application Ser. No.61/159,830, Array of Alpha Particle Sensors, filed on Mar. 13, 2009.

BACKGROUND

The present invention relates generally to semiconductor devices, and,more particularly, to the sensing or detection of ionizing radiation insemiconductor devices.

Ionizing radiation can cause single event upsets (“SEUs”) or “softerrors” in semiconductor integrated circuits (“ICs”). In general, thereexist multiple radiation sources that affect the proper operation ofICs. These may comprise, for example, alpha particles from packagingmaterials (e.g., lead or lead-free solder bumps) or impuritiesintroduced in wafer processing. Other radiation sources include daughterparticles from terrestrial cosmic ray neutron collisions, energeticheavy ions in a space environment, and daughter particles from protoncollisions in a space environment (e.g., trapped proton belts).

Ionizing radiation can directly upset storage circuits, such as SRAMs,register files and flip-flops. Undesirable memory cell bit state flipsor transitions between binary logic states have occurred for years, anderror checking and correction (“ECC”) techniques are typically used tocorrect for any radiation-induced errors in the memory cells. Morerecently, as combinational logic has scaled down in size, radiationevents create voltage glitches that can be latched by such logiccircuits. In general, SEUs may cause the IC to perform incorrect orillegal operations.

Methods to prevent SEUs include adding spatial and/or temporalredundancy within the semiconductor device, so that a single radiationevent cannot cause an SEU therein. However, redundancy solutions incurarea, power and performance penalties. It is known to use relativelysmall detectors or sensors as part of the IC to detect radiation that isrelatively uniform. However, the radiation environment for commercialand space applications typically comprises discrete events, localized intime and space, rather than a uniform dose of radiation spread acrossthe IC. Thus, the known devices cannot detect the more common radiationenvironment consisting of individual events.

BRIEF SUMMARY

According to an embodiment of the invention, an array of radiationsensors or detectors is integrated within a three-dimensionalsemiconductor IC. The sensor array is located relatively close to thedevice layer of a circuit (e.g., a microprocessor) to be protected fromthe adverse effects of the ionizing radiation particles. As such, thelocation where the radiation particles intersect the device layer can becalculated with coarse precision (e.g., to within 10 s of microns).Various embodiments of the invention teach the sensing and localizationof individual radiation events.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

Referring to the exemplary drawings wherein like elements are numberedalike in the several Figures:

FIG. 1 is a schematic diagram of a radiation sensor circuit utilized invarious embodiments of the invention;

FIG. 2 illustrates a layout of the radiation sensor circuit of FIG. 1;

FIG. 3 illustrates a layout of an arrangement of four of the radiationsensor circuits of FIG. 1;

FIG. 4 illustrates in cross-section a three-dimensional IC in which anarray of a plurality of the radiation sensor cells of FIGS. 1-3 arearranged together in a layer disposed on top of a circuit layeraccording to an embodiment of the invention;

FIG. 5 illustrates the steps involved in fabricating the IC of FIG. 4:and

FIG. 6 illustrates in cross-section two alternative embodiments of theinvention.

DETAILED DESCRIPTION

Referring to FIG. 1, there illustrated is a schematic diagram of aradiation sensor circuit or cell 100 utilized in various embodiments ofthe invention. The radiation sensor cell 100 includes three transistors:a pre-charge NFET 102, a detector NFET 104, and an access NFET 106. Thepre-charge NFET 102 functions as a reset device, the detector NFET 104functions as a detector pull-down device, and the access NFET 106functions as an access device. An internal charge collection node 108connects to all of the devices 102-106, as discussed hereinafter in moredetail.

More specifically, the pre-charge NFET 102 has a source connected to thecharge collection node 108, a drain connected to Vdd, and a gatecontrolled by a pre-charge signal (“Reset”) on a line 110. The detectorNFET 104 has a drain connected to the charge collection node 108, asource connected to ground, and a grounded gate. The access NFET 106 hasa source connected to the charge collection node 108, a drain connectedto a readout node 112 (i.e., the bitline), and a gate controlled by aRead Enable signal on a line 114.

Asserting the Reset signal 110 charges the internal charge collectionnode 108 through the pre-charge device 102, which, when turned on by theReset signal 110, charges the node 108. A radiation event on thedetector pull-down device 106 discharges the node 108; that is, aradiation event will turn on the detector pull-down device 106, which,in turn, discharges the charge collection node 108 to ground. When theRead Enable signal 114 is asserted, the access device 106 writes thestate of the internal charge collection node 108 to the bitline 112,where a logic high indicates that no radiation event has occurred and alogic low indicates the occurrence of a radiation event. As such, whenthere is no radiation event, the charge collection node 108 remainscharged by the pre-charge device 102, and the output of the node 108 ishigh. When a radiation event is sensed, the node 108 will discharge toground and the output of the node 108 is low.

To increase the sensitive area in each sensor cell 100, multipledetector pull-down NFET devices 104 may be connected in parallel, sincethe occurrence of a radiation event on any one of the detector pull-downdevices 104 will discharge the node 108. The sensitive area of theradiation sensor cell 100 comprises a relatively larger portion of thesensor cell area as compared to an SRAM cell, such that the radiationsensor cell 100 will have relatively larger detection efficiency. Theradiation sensor cell 100 does not enter a high current state when itdetects radiation and will use less power than a PNPN structure.

Referring to FIG. 2, there illustrated is an exemplary layout of theradiation sensor cell 100 of FIG. 1. To increase the sensitive area ineach cell 100, multiple detector pull-down devices 104 may be connectedin parallel as shown in FIG. 2, since the occurrence of a radiationevent on any one of the detector pull-down devices 104 will dischargethe node 108. To increase the fraction of the sensor cell 100 sensitiveto radiation, the pre-charge device 102 and the access device 106 mayhave a smaller gate width than the detector pull-down device(s) 104.

In particular, the layout of the radiation sensor cell 100 illustratedin FIG. 2 shows six detector pull-down devices 104 connected inparallel. In FIG. 2, the radiation sensor cell 100 may be fabricated ina silicon-on-insulator (“SOI”) wafer. The wafer may have a relativelythick SOI layer (250 nm) to increase the charge collection volume. Thesource and drain implants may not extend to the buried oxide (“BOX”)layer, such that holes generated in the source/drain diffusions arecollected in the body, thereby charging the body and causing a parasiticbipolar response.

The radiation detector shown in FIG. 2 comprises the three transistors102-106. The reset signal 110 is used to charge the internal chargecollection node(s) 108, which are connected together via a metal wire(not shown). A radiation event on the detector pull-down device 104discharges the charge collection node(s) 108. When the Read Enablesignal 114 is asserted, the access device 106 writes the state of thecharge collection node 108 to the bitline (“BL”) 112, where a logic highindicates that no radiation event has occurred and a logic low indicatesthe occurrence of a radiation event. Due to the parallel arrangement ofthe multiple pull-down devices 104 in FIG. 2, an SEU on any one of thepull-down devices 104 will discharge the charge collection node 108 toground.

For SOI devices with a relatively thick SOI layer and source and drainimplants that do not extend to the BOX layer, the body, source and drainserve as collection areas. SOI circuits can be designed with Qcrit ofapproximately 1 fC. Depending on their energy, alpha particles generate4-13 fC/um in silicon, such that the alpha particle path length throughthe SOI layer needs to be about 0.08-0.25 um. Having an SOI layerthickness of 0.25 um allows detection of alpha particles of any energyand angle that hits the sensitive region of the sensor cell 100.

As an alternate embodiment, the pre-charge device 102 may comprise aPMOS transistor. Using a PMOS transistor charges the internal chargecollection node 108 to Vdd, without the diode drop of an NMOS pre-chargedevice. However, a PMOS pre-charge transistor 102 requires more areathan an NMOS pre-charge transistor when placed in its own siliconisland. The area penalty of a PMOS pre-charge transistor can beminimized by using butted junctions and mirroring sensors.

Referring to FIG. 3, there illustrated is a layout of four of theradiation sensor cells 100 of FIG. 1. Each sensor cell 100 includes sixdetector pull-down devices in parallel. The PMOS pre-charge devices arein a shared Nwell with their drains abutting drains of NMOS pre-chargedevices.

Referring to FIG. 4, there illustrated in cross-section is athree-dimensional IC 400 in which an embodiment of the invention isimplemented. Specifically, an array of a plurality of the radiationsensor cells 100 of FIGS. 1-3 are arranged together in a layer 402,which may be a SOI layer. The layer 402 may be disposed or located ontop of a circuit layer 404. The circuit layer 404 may comprise, forexample, a microprocessor or SRAM memory or other logic device in whichionizing radiation normally causes an SEU to occur. The two layers402-404 are relatively closely spaced (for example, within 15 microns ofeach other) such that the radiation sensor layer 402 will detect, e.g.,alpha particles and cosmic ray daughter particles, which will hit the IClayer 404 in a localized spot or location on that layer 404.

The IC 400 of FIG. 4 may be fabricated or constructed using athree-dimensional process to incorporate the radiation sensor arraylayer 402 together with the circuit layer 404 into the final IC 400.Referring to FIG. 5, using a layer transfer method, the radiation sensorarray 402 may be processed on a first wafer 500, which may comprise aSOI wafer. The first wafer 500 may then be attached to a glass handlerwafer or substrate 502. Then the substrate 505 of the IC 400 is removedby etching, exposing or stopping at the buried oxide layer (“BOX”). Theradiation sensor array 402 device layer 500 may then be aligned andbonded to the microprocessor circuit layer 404, which has been processedin a second wafer 504. Finally, the glass handler wafer 502 andadhesives are removed, and vertical interconnects can be made to themicroprocessor 404.

Since the radiation sensor array 402 may be within 15 um of themicroprocessor device layer 404, the radiation sensor cells 100 in thearray 402 can detect alpha particles from packaging materials (e.g.solder bumps and underfill) and daughter particles from cosmic rayneutron collisions that will hit the microprocessor layer 404 and canthen convey this information to other components for further processing.The location of the radiation event in the microprocessor device layer404 can be located with coarse granularity. For example, if the typicalalpha particle range is 25 um and the radiation sensor array 402 islocated 10 microns above the microprocessor device layer 404, theradiation event will be within 28 um of the triggered radiation sensorcell 100. In an embodiment of the invention, the radiation sensor array402 may be located in a range of 10-15 microns from the microprocessordevice layer 404.

Referring to FIG. 6, in an alternative embodiment of the invention, theradiation sensor array 600 is located below the microprocessor devicelayer 602. The microprocessor 602 connects to the package through highresistance, lower density inter-device-layer vias. Placing themicroprocessor 602 above the radiation sensor layer 600 allow greatercontact density. Some alpha particles from packaging materials thatcross the microprocessor device layer may not reach the radiation sensorarray, so the detection efficiency would be reduced.

Still referring to FIG. 6, in another alternative embodiment of theinvention, three device layers 600-604 are stacked. A radiation sensorarray 604 comprises the top layer; the microprocessor 602 comprises themiddle layer; and a second radiation sensor array 600 comprises thethird layer, located, e.g., 10-15 microns from the middle layer 602.This embodiment of the invention is appropriate for high-energy ions ina space environment, which have sufficient range to cross both radiationsensor arrays 600, 604. The location of the radiation event in themicroprocessor device layer 602 can be calculated from the intersectionpoints in the two radiation sensor arrays 600, 604 above and below it.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

1. A semiconductor device, comprising: a first layer that includes aplurality of radiation sensor cells arranged within the first layer,wherein each of the radiation sensor cells is operable to sense ionizingradiation that hits the cell; and a second layer that comprises acircuit layer.
 2. The semiconductor device of claim 1, wherein the firstlayer is disposed on top of the second layer.
 3. The semiconductordevice of claim 1, wherein the first layer is disposed below the secondlayer.
 4. The semiconductor device of claim 1, further comprising athird layer that includes a plurality of the radiation sensor cellsarranged across the third layer.
 5. The semiconductor device of claim 4,wherein the first layer is disposed on top of the second layer and thethird layer is disposed below the second layer.
 6. The semiconductordevice of claim 1, wherein the first layer is disposed in a range offrom 10-15 microns from the second layer.
 7. The semiconductor device ofclaim 4, wherein the third layer is disposed in a range of from 10-15microns from the second layer.
 8. The semiconductor device of claim 1,wherein each of the radiation sensor cells comprises a first transistorthat pre-charges a node within the cell to a first voltage value otherthan ground, a second transistor that discharges the node to a groundvoltage value when the cell senses ionizing radiation that hits thecell, and a third transistor that allows for selected access to a logicstate of the node from outside of the cell, wherein the logic state ofthe node corresponds to the voltage value on the node.
 9. Thesemiconductor device of claim 1, where the first layer comprises asilicon-on-insulator layer.
 10. The semiconductor device of claim 4,where the third layer comprises a silicon-on-insulator layer.
 11. Amethod for fabricating a semiconductor integrated circuit, comprising:processing a radiation sensor array on a first wafer; attaching thefirst wafer to a glass handler wafer; removing the substrate of thefirst wafer by etching; processing a circuit layer; aligning theradiation sensor array to the circuit layer; bonding the radiationsensor array to the circuit layer; removing the handler wafer andadhesives; and forming interconnects from the radiation sensor array tothe circuit layer.
 12. The method of claim 11, where the first wafercomprises a silicon-on-insulator wafer.
 13. The method of claim 11,where the circuit layer comprises a microprocessor.
 14. The method ofclaim 11, further comprising stopping the etching at a buried oxidelayer.
 15. The method of claim 11, wherein bonding the radiation sensorarray to the circuit layer comprises using an adhesive, and furthercomprising removing the adhesive prior to forming interconnects from theradiation sensor array to the circuit layer.
 16. A semiconductor device,comprising: a first layer that includes a plurality of radiation sensorcells arranged within the first layer, wherein each of the radiationsensor cells is operable to sense ionizing radiation that hits the cell,wherein each of the radiation sensor cells comprises a first transistorthat pre-charges a node within the cell to a first voltage value otherthan ground, a second transistor that discharges the node to a groundvoltage value when the cell senses ionizing radiation that hits thecell, and a third transistor that allows for selected access to a logicstate of the node from outside of the cell, wherein the logic state ofthe node corresponds to the voltage value on the node; and a secondlayer that comprises a circuit layer.
 17. The semiconductor device ofclaim 16, wherein the first layer is disposed on top of the secondlayer.
 18. The semiconductor device of claim 16, wherein the first layeris disposed below the second layer.
 19. The semiconductor device ofclaim 16, further comprising a third layer that includes a plurality ofthe radiation sensor cells arranged across the third layer.
 20. Thesemiconductor device of claim 19, wherein the first layer is disposed ontop of the second layer and the third layer is disposed below the secondlayer.
 21. The semiconductor device of claim 16, wherein the first layeris disposed in a range of from 10-15 microns from the second layer. 22.The semiconductor device of claim 19, wherein the third layer isdisposed in a range of from 10-15 microns from the second layer.
 23. Thesemiconductor device of claim 16, where the first layer comprises asilicon-on-insulator layer.
 24. The semiconductor device of claim 19,where the third layer comprises a silicon-on-insulator layer.
 25. Asilicon-on-insulator semiconductor device, comprising: a first layerthat includes a plurality of radiation sensor cells arranged within thefirst layer, wherein each of the radiation sensor cells is operable tosense ionizing radiation that hits the cell, wherein each of theradiation sensor cells comprises a first transistor that pre-charges anode within the cell to a first voltage value other than ground, asecond transistor that discharges the node to a ground voltage valuewhen the cell senses ionizing radiation that hits the cell, and a thirdtransistor that allows for selected access to a logic state of the nodefrom outside of the cell, wherein the logic state of the nodecorresponds to the voltage value on the node; a second layer thatcomprises a circuit layer; and a third layer that includes a pluralityof the radiation sensor cells arranged within the third layer, whereineach of the radiation sensor cells is operable to sense ionizingradiation that hits the cell, wherein each of the radiation sensor cellscomprises a first transistor that pre-charges a node within the cell toa first voltage value other than ground, a second transistor thatdischarges the node to a ground voltage value when the cell sensesionizing radiation that hits the cell, and a third transistor thatallows for selected access to a logic state of the node from outside ofthe cell, wherein the logic state of the node corresponds to the voltagevalue on the node; wherein the first layer is disposed on top of thesecond layer and the third layer is disposed below the second layer.